Substrate treating apparatus with parallel substrate treatment lines

ABSTRACT

A substrate treating apparatus for treating substrates includes a plurality of substrate treatment lines arranged vertically for carrying out plural types of treatment on the substrates while transporting the substrates substantially horizontally, and a controller for changing processes of treatment carried out on the substrates for each of the substrate treatment lines. By changing the processes of treatment carried out for the substrates for each substrate treatment line, the processes of treatment carried out for the substrates can be changed for each substrate conveniently. Thus, a plurality of different processes of treatment corresponding to the number of substrate treatment lines can be carried out in parallel for the respective substrates.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/343,292, filed on Dec. 23, 2008 which claims priority to JapanesePatent Application JP 2007-340428, filed on Dec. 28, 2007, the entiredisclosures of which are hereby incorporated by reference in theirentirety for all purposes.

BACKGROUND OF THE INVENTION

This invention relates to a substrate treating apparatus for performinga series of treatments of substrates such as semiconductor wafers, glasssubstrates for liquid crystal displays, glass substrates for photomasks,and substrates for optical disks (hereinafter called simply“substrates”).

Conventionally, this type of apparatus includes a substrate treatingapparatus used to form a resist film on substrates, and develop thesubstrates exposed in a separate exposing machine. This apparatusincludes a treating section having, arranged therein, a coating blockfor carrying out resist film forming treatment, a developing block forcarrying out developing treatment, and so on. Each such treating blockincludes a single main transport mechanism, and various treating units.The main transport mechanism of each treating block, while transportingsubstrates to the treating units in that block, transfers the substratesto and from the main transport mechanism of another, adjacent treatingblock. Thus, a plurality of substrates are successively transported tovarious treating units to receive a series of treatments. The series oftreatments includes a process for forming resist film on the substratesand developing the substrates, for example. This process includes aplurality of different type treatments interposed by the exposingtreatment in the external exposing machine. Each main transportmechanism transports the plurality of substrates in parallel to carryout successively the processes of treatment for each substrate (asdisclosed in Japanese Unexamined Patent Publication No. 2003-324139, forexample).

The conventional apparatus with such a construction has the followingdrawbacks.

For example, it may be desired to operate the apparatus such that, whileputting certain of the treating units to a test run, the other treatingunits are used to carry out a series of treatments for substrates. Or itmay be desired to operate the apparatus to carry out the process forforming resist film and developing some substrates, and at the same timeto carry out the process for forming resist film on other substrates. A“process” here may include a plurality of different types of treatment,or may include a single treatment.

However, different processes between the substrates require differentsubstrate transport paths to the various treating units. Therefore, themain transport mechanisms cannot transport the substrates efficiently.With the conventional apparatus, it is difficult to change the processesof treatment for each substrate. In other words, the conventionalapparatus has difficulty in proceeding with a plurality of processes inparallel.

SUMMARY OF THE INVENTION

This invention has been made having regard to the state of the art notedabove, and its object is to provide a substrate treating apparatus thatcan change substrate treating processes for each substrate, therebyproceeding with two or more different processes of treatment inparallel.

The above object is fulfilled, according to this invention, by asubstrate treating apparatus comprising a plurality of substratetreatment lines for carrying out plural types of treatment on substrateswhile transporting the substrates substantially horizontally; and acontroller for changing processes of treatment carried out on thesubstrates for each of the substrate treatment lines.

According to this invention, a plurality of substrate treatment linesand a controller are provided so that the processes of treatment carriedout for substrates can be changed for each substrate treatment line.Therefore, according to a substrate treatment line to transport thesubstrates, the processes of treatment carried out for substrates can bechanged for each substrate. This allows the types of processescorresponding to the number of substrate treatment lines to be carriedout for the substrates in parallel.

In the invention noted above, the substrate treatment lines may bearranged vertically. By arranging the plurality of substrate treatmentline in a way to overlap one another in the vertical direction, anincrease in footprint can be avoided.

In the invention noted above, the controller may be capable of makingprocesses in the substrate treatment lines different between thesubstrate treatment lines; and capable of making processes in thesubstrate treatment lines uniform for all the substrate treatment lines.By making processes for treating the substrates uniform for all thesubstrate treatment lines, the substrates having been treated throughthe same process can be obtained from all the substrate treatment lines.By making processes for treating the substrates different between thesubstrate treatment lines, various substrates having been treatedthrough different processes can be obtained from the substrate treatmentlines.

In the invention noted above, the controller may be capable of makingthe processes in all the substrate treatment lines a process for formingresist film on the substrates and a process for developing thesubstrates. Then, the substrate treatment lines can conveniently carryout a series of treatments to form resist film on the substrates anddevelop the substrates. Thus, substrates having resist film formedthereon and developed can be obtained from all the substrate treatmentlines.

In the invention noted above, the controller may be arranged to causepart of the substrate treatment lines to treat the substrates in aprocess in a normal operation, and other of the substrate treatmentlines to treat the substrates in a process in a test run. The substratetreatment lines can carry out separately and in parallel a normaloperation to treat the substrates in a process in the normal operation,and a test run to treat the substrates in a process in the test run.This provides the effect of inhibiting a lowering of the working rate ofthis apparatus even at the time of a test run.

In the invention noted above, the controller may be capable of makingthe process in part of the substrate treatment lines all of a processfor forming resist film on the substrates and developing the substrates,and making the process in other of the substrate treatment lines part ofthe process for forming resist film on the substrates and developing thesubstrates. Then, substrates having resist film formed thereon anddeveloped can be obtained from part of the substrate treatment lines,and substrates having undergone part of the series of treatments to formresist film and develop can be obtained from other of the substratetreatment lines.

In the invention noted above, the process in the other of the substratetreatment lines may be one of a process for forming resist film on thesubstrates and a process for developing the substrates. Then, substrateshaving resist film formed thereon or developed substrates can beobtained from the other of the substrate treatment lines.

In the invention noted above, the controller may be capable of causingpart of the substrate treatment lines to carry out a process including aplurality of different type treatments, and causing other of thesubstrate treatment lines to carry out a process including a singletreatment. Then, substrates having received a plurality of differenttype treatments can be obtained from part of the substrate treatmentlines, and substrates having received a single treatment can be obtainedfrom other of the substrate treatment lines.

In the invention noted above, the process including a single treatmentmay be a process including one of resist film material coating treatmentfor applying a resist film material to the substrates, developingtreatment for supplying a developer to the substrates, and heattreatment for heating or cooling the substrates. Then, substrates havingreceived only the resist film material coating treatment, developingtreatment or heat treatment can be obtained from the other of thesubstrate treatment lines.

In the invention noted above, the controller may be capable of causingpart of the substrate treatment lines to carry out a first processincluding a plurality of different type treatments, and causing other ofthe substrate treatment lines to carry out a second process including aplurality of different type treatments and different from the firstprocess. Then, part of the substrate treatment lines and other of thesubstrate treatment lines can carry out a plurality of different typetreatments different from each other.

In the invention noted above, at least one of the first process and thesecond process may include at least one of resist film material coatingtreatment for applying a resist film material to the substrates,developing treatment for supplying a developer to the substrates, andheat treatment for heating or cooling the substrates. Then, at least oneof the substrate treatment lines can carry out a process relating to theresist film material coating treatment, a process relating to thedeveloping treatment, or a process relating to the heat treatment.

In another aspect of this invention, a substrate treating apparatuscomprises a plurality of treating blocks arranged in juxtaposition, eachhaving treating units provided on each of stories arranged verticallyfor treating substrates, and a main transport mechanism provided on eachof the stories for transporting the substrates to and from the treatingunits on each of the stories, each of the treating blocks being capableof carrying out a series of treatments for the substrates on each of thestories, with the substrates transferred between the main transportmechanisms on the same stories of the treating blocks adjacent eachother; and a controller for controlling each main transport mechanism tochange substrate transport paths to and from the treating units on eachof the stories.

According to this invention, a plurality of treating blocks each havinga plurality of stories and a controller for changing substrate transportpaths for each of the stories are provided to change substrate treatmentfor each story. This allows the types of treatment corresponding to thenumber of stories of the treating blocks to be carried out in parallel.

In the invention noted above, the controller may be capable of causingall or part of the series of treatments to be carried out for thesubstrates on each of the stories. Then, all of the series of treatmentscan be carried out for the substrates on each story. Part of the seriesof treatments can be carried out for the substrates on each story. Thecontroller controls treatment on each story independently of the otherstories. Consequently, desired treatment can be carried out for thesubstrates on each story.

In the invention noted above, on a story having treating units put to atest run, the controller may be arranged to cause the substrates to betransported only to the treating units put to the test run. Bytransporting the substrates only to the treating units put to the testrun, the quality of treatment given by the treating units to thesubstrates can be examined, verified and checked conveniently.

In the invention noted above, the apparatus may further comprise aninput unit for inputting information to set substrate transport paths toeach of the stories, wherein the controller is arranged to change thetransport paths on each of the stories based on the information inputtedto the input unit. With the input unit provided, the controller changessubstrate transport paths to the treating units for each story. Thus,the particulars of the treatment carried out for the substrates on eachstory can be changed simply.

In the invention noted above, the information inputted to the input unitmay be information on types and an order of treatment carried out forthe substrates on each of the stories. According to the information onthe types and order of treatment carried out for the substrates on eachstory, the controller can change properly the substrate transport pathsto the treating units for each story.

In the invention noted above, the information inputted to the input unitmay be information identifying treating units put to a test run.According to the information identifying treating units put to a testrun, the controller can change conveniently the transport paths on thestory where these treating units are provided. Preferably, for example,the controller transports the substrates only to these treating units.This is because a test run can be carried out on these treating units.

In the invention noted above, the treating blocks may include a coatingblock and a developing block. The coating block has as the treatingunits coating units for applying a treating solution to the substrates;and the developing block has as the treating units developing units forsupplying a developer to the substrates. Then, coating treatment forapplying a treating solution to the substrates and developing treatmentfor supplying a developer to the substrates can be carried out on eachstory of the treating section.

In the invention noted above, the controller may be capable of causingthe substrates loaded onto all of the stories of the coating block to befed out of the coating block after being treated in the coating units;and capable of causing the substrates loaded onto part of the stories ofthe coating block to be fed out of the coating block after being treatedin the coating units, and causing the substrates loaded onto other ofthe stories of the coating block to be fed out of the coating blockwithout being transported to the coating units. In the first instancethe coating treatment can be carried out on all the stories of thecoating block. In the second instance while the coating treatment iscarried out on part of the stories of the coating block, the coatingtreatment can be omitted on other of the stories of the coating block.

In the invention noted above, the controller may be capable of causingthe substrates loaded onto all of the stories of the developing block tobe fed out of the developing block after being treated in the developingunits; and capable of causing the substrates loaded onto part of thestories of the developing block to be fed out of the developing blockafter being treated in the developing units, and causing the substratesloaded onto other of the stories of the developing block to be fed outof the developing block without being transported to the developingunits. In the first instance the developing treatment can be carried outon all the stories of the developing block. In the second instance whilethe developing treatment is carried out on part of the stories of thedeveloping block, the developing treatment can be omitted on other ofthe stories of the developing block.

This specification discloses an invention directed to the followingsubstrate treating apparatus:

(1) The apparatus according to an embodiment wherein each of thesubstrate treatment lines includes a plurality of treating units andmain transport mechanisms for transporting the substrates to and fromthe treating units. Since each substrate treatment line has its owntreating units and main transport mechanisms, the controller canconveniently change substrate transport paths to the treating units foreach substrate treatment line.

(2) The apparatus according to an embodiment wherein the process in theother of the substrate treatment lines is a process including a singletreatment. Then, substrates having received a single treatment can beobtained from the other of the substrate treatment lines.

(3) The apparatus according to an embodiment wherein the processincluding a plurality of different type treatments includes at least oneof resist film material coating treatment for applying a resist filmmaterial to the substrates, developing treatment for supplying adeveloper to the substrates, and heat treatment for heating or coolingthe substrates. Then, a process relating to the resist film materialcoating treatment, a process relating to the developing treatment or aprocess relating to the heat treatment can be carried out in the part ofthe substrate treatment lines which carry out the process including aplurality of different type treatments.

(4) The apparatus according to an embodiment wherein the processincluding a plurality of different type treatments includes at least oneof resist film material coating treatment for applying a resist filmmaterial to the substrates and developing treatment for supplying adeveloper to the substrates. Then, substrates with resist film formedthereon or developed substrates can be obtained from the part of thesubstrate treatment lines which carry out the process including aplurality of different type treatments.

(5) The apparatus according to an embodiment wherein a first process anda second process each includes at least one of resist film materialcoating treatment for applying a resist film material to the substrates,developing treatment for supplying a developer to the substrates, andheat treatment for heating or cooling the substrates. Then, each of thedifferent parts of the substrate treatment lines can carry out a processrelating to the resist film material coating treatment, a processrelating to the developing treatment, or a process relating to the heattreatment.

(6) The apparatus according to an embodiment wherein a first process isa process for forming resist film on the substrates and developing thesubstrates, and a second process is one of a process for forming resistfilm on the substrates and a process for developing the substrates.Then, substrates having resist film formed thereon and developed can beobtained from one part of the substrate treatment lines, whilesubstrates having resist film formed thereon or developed substrates canbe obtained from another part of the substrate treatment lines.

(7) The apparatus according to an embodiment wherein one of a firstprocess and a second process is a process for forming resist film on thesubstrates, and another of a first process and a second process is aprocess for developing the substrates. Then, substrates having resistfilm formed thereon can be obtained from one part of the substratetreatment lines, while developed substrates can be obtained from anotherpart of the substrate treatment lines.

(8) The apparatus according to an embodiment, wherein in one instancethe controller is capable of causing all the substrate treatment linesto carry out processes for forming resist film on the substrates anddeveloping the substrates, including resist film material coatingtreatment for applying a resist film material to the substrates,developing treatment for supplying a developer to the substrates, andheat treatment for heating or cooling the substrates, and in anotherinstance is capable of causing part of the substrate treatment lines tocarry out processes for forming resist film on the substrates anddeveloping the substrates, including the resist film material coatingtreatment, the developing treatment and the heat treatment, and causinganother part of the substrate treatment lines to carry out one of aprocess for forming resist film on the substrates, including the resistfilm material coating treatment and the heat treatment, and a processfor developing the substrates, including the developing treatment andthe heat treatment. Then, in the first instance substrates having resistfilm formed thereon and developed can be obtained from all the substratetreatment lines. In the second instance, substrates having resist filmformed thereon and developed can be obtained from a part of thesubstrate treatment lines, while substrates having resist film formedthereon or developed substrates can be obtained from the other of thesubstrate treatment lines.

(9) The apparatus according to an embodiment, wherein the coating unitsare resist film coating units for applying a resist film material to thesubstrates. Then, the coating block can conveniently form resist film onthe substrates.

(10) The apparatus according to claim an embodiment, wherein the coatingblock further includes, as the treating units, heat-treating units forheat-treating the substrates, and the developing block further includes,as the treating units, heat-treating units for heat-treating thesubstrates. Then, the coating block can conveniently proceed with thetreatment in the coating units and heat-treating units. The developingblock also can conveniently proceed with the treatment in the developingunits and heat-treating units.

(11) The apparatus according to an embodiment, wherein the coating blockand the developing block are arranged adjacent each other. Then, theprocesses including the treatments in the coating units and developingunits can be carried out smoothly.

(12) The apparatus according to (11) above, further comprising anindexer section disposed adjacent the coating block for transportingsubstrates to and from a cassette configured to store a plurality ofsubstrates, and transferring the substrates to and from each maintransport mechanism of the coating block. Since the coating block cantransfer the substrates to and from the indexer section, the particularsof treatment on each story can be changed flexibly.

(13) The apparatus according to (11) above, further comprising aninterface section disposed adjacent the developing block fortransporting the substrates to and from an exposing machine providedseparately from the apparatus, and transferring the substrates to andfrom each main transport mechanism of the developing block. Since thedeveloping block can transfer the substrates to and from the interfacesection, the particulars of treatment on each story can be changedflexibly.

(14) An embodiment of a substrate treating apparatus comprising aplurality of substrate treatment lines arranged vertically for carryingout a series of treatments on substrates while transporting thesubstrates substantially horizontally; and a controller capable ofcausing each of the substrate treatment lines to carry out all of theseries of treatments on the substrates, and to carry out only part ofthe series of treatments. According to this embodiment with theplurality of substrate treatment lines and the controller, eachsubstrate treatment line can be changed between all of the series oftreatments and part of the series of treatments carried out on thesubstrates. It is thus possible to proceed with the types of treatmentcorresponding to the number of substrate treatment lines in parallel.

(15) An embodiment according to (14) above wherein the controller iscapable of causing all of the substrate treatment lines to carry out allof the series of treatments on the substrates, and capable of causingpart of the substrate treatment lines to carry out all of the series oftreatments on the substrates, while causing other of the substratetreatment lines to carry out part of the series of treatments on thesubstrates. All of the substrate treatment lines can carry out all ofthe series of treatments on the substrates. Part of the substratetreatment lines can carry out all of the series of treatments on thesubstrates, while other of the substrate treatment lines can carry outpart of the series of treatments on the substrates.

(16) An embodiment according to (14) above wherein the controller iscapable of causing part of the substrate treatment lines to engage in anormal operation for carrying out all of the series of treatments on thesubstrates, and causing other of the substrate treatment lines to engagein a test run for carrying out part of the series of treatments on thesubstrates. Thus, part of the substrate treatment lines can engage in anormal operation while other of the substrate treatment lines is put toa test run so that the other substrate treatment line may be restored toits normal state.

BRIEF DESCRIPTION OF THE DRAWINGS

For the purpose of illustrating the invention, there are shown in thedrawings several forms which are presently preferred, it beingunderstood, however, that the invention is not limited to the precisearrangement and instrumentalities shown.

FIG. 1 is a schematic view showing an outline of a substrate treatingapparatus according to this invention;

FIG. 2 is a schematic view showing an outline of a substrate treatingapparatus according to this invention;

FIG. 3 is a plan view showing an outline of the substrate treatingapparatus according to this invention;

FIG. 4 is a schematic side view showing an arrangement of treating unitsincluded in the substrate treating apparatus;

FIG. 5 is a schematic side view showing an arrangement of treating unitsincluded in the substrate treating apparatus;

FIG. 6 is a view in vertical section taken on line a-a of FIG. 3;

FIG. 7 is a view in vertical section taken on line b-b of FIG. 3;

FIG. 8 is a view in vertical section taken on line c-c of FIG. 3;

FIG. 9 is a view in vertical section taken on line d-d of FIG. 3;

FIG. 10A is a plan view of coating units;

FIG. 10B is a sectional view of a coating unit;

FIG. 11 is a perspective view of a main transport mechanism;

FIG. 12 is a control block diagram of the substrate treating apparatusaccording to the invention;

FIG. 13 is a flow chart of a series of treatments of substrates;

FIG. 14 is a view schematically showing operations repeated by eachtransport mechanism;

FIG. 15 is a flow chart of a series of treatments of substrates;

FIG. 16 is a view schematically showing operations repeated by eachtransport mechanism;

FIG. 17 is a schematic view showing an outline of a modified substratetreating apparatus; and

FIG. 18 is a schematic view showing an outline of a substrate treatingapparatus in a comparative example.

DETAILED DESCRIPTION OF THE INVENTION

A preferred embodiment of this invention will be described in detailhereinafter with reference to the drawings.

An outline of this embodiment will be described first. FIGS. 1 and 2 areschematic views showing an outline of a substrate treating apparatusaccording to an embodiment of this invention. FIG. 1 shows an example oftreating substrates in the same process through all substrate treatmentlines. FIG. 2 shows an example of treating substrates in differentprocesses through the substrate treatment lines.

This embodiment provides a substrate treating apparatus 10 for formingresist film on substrates (e.g. semiconductor wafers) W, and developingexposed wafers W. The substrate treating apparatus 10 will beabbreviated hereinafter as the apparatus 10 as appropriate. Thisapparatus 10 has two substrate treatment lines Lu and Ld for performinga plurality of different type treatments for the wafers W whiletransporting the wafers W substantially horizontally. The substratetreatment lines Lu and Ld are arranged one over the other. The substratetreatment lines Lu and Ld constitute a treating section 3. In thefollowing description, the substrate treatment lines Lu and Ld will bereferred to simply as the substrate treatment lines L when they are notdistinguished. This apparatus 10 has an exposing machine EXP, which isseparate from this apparatus 10, disposed adjacent an interface sectiondescribed hereinafter. The exposing machine EXP is used to expose thewafers W.

The treatment that can be carried out in each substrate treatment line Lis roughly divided into coating treatment, heat treatment, edge exposureand developing treatment. The coating treatment includes antireflectionfilm material coating treatment and resist film material coatingtreatment. The heat treatment includes cooling treatment, heatingtreatment, heating and cooling treatment, and PEB (Post Exposure Bake)treatment. Although the PEB treatment is also called post-exposurebaking treatment, this specification uses the term “PEB treatment”.

In FIG. 1, the substrate treatment lines Lu and Ld carry out the sameprocess of treatment for the wafers W. The process in each of thesubstrate treatment lines Lu and Ld includes a plurality of differenttype treatments. Specifically, the process in each substrate treatmentline L includes cooling treatment T1, antireflection film materialcoating treatment T2, heating and cooling treatment T3, coolingtreatment T4, resist film material coating treatment T5, heating andcooling treatment T6, cooling treatment T7, edge exposure T8, PEBtreatment T10, cooling treatment T11, developing treatment T12, heatingtreatment T13 and cooling treatment T14, which are carried out in thestated order. Sign “u” affixed to the various treatments T1-T8 andT10-T14 indicates the treatments carried out in the substrate treatmentline Lu, while sign “d” indicates the treatments carried out in thesubstrate treatment line Ld. Inserted after the edge exposure T8 andbefore the PEB treatment T10 is exposure T9 carried out by the exposingmachine EXP.

The series of treatments from the cooling treatment T1 u to the edgeexposure T8 u and from the PEB treatment T10 u to the cooling treatmentT14 u corresponds to the “process for forming resist film on thesubstrates, and for developing the substrates” in this invention.Similarly, the series of treatments from the cooling treatment T1 d tothe edge exposure T8 d and from the PEB treatment T10 d to the coolingtreatment T14 d corresponds to the “process for forming resist film onthe substrates and for developing the substrates” in this invention. Inthe following description, the “process for forming resist film on thesubstrates and for developing the substrates” will be called the“coating and developing process” as appropriate.

The substrate treatment lines Lu and Ld carry out the coating anddeveloping process in parallel, thereby to obtain wafers W with resistfilm formed thereon and developed from each substrate treatment line Luor Ld. In FIG. 1, sign “Wa” is affixed to wafers W having received thetreatment in the coating and developing process.

When each process in the substrate treatment line Lu or Ld is aimed atsubstrate treatment, the process is one executed during a normaloperation. When each process in the substrate treatment line Lu or Ld isaimed at checking or testing of treatment quality, or at a test run ofthe treating units, the process is one executed during a test run.

In FIG. 2, the substrate treatment lines Lu and Ld carry out differentprocesses. The process in the substrate treatment line Lu is the coatingand developing process. The process in the substrate treatment line Ldconsists of a single treatment (resist film material coating treatmentT21 d). Consequently, while wafers W with resist film formed thereon anddeveloped are obtained from the substrate treatment line Lu, wafers Whaving received the resist film material coating treatment can beobtained from the substrate treatment line Ld. In FIG. 2, sign “Wa” isaffixed to the wafers W having received the treatment in the coating anddeveloping process, and sign “Wb” to the wafers W having received theresist film material coating treatment.

In the example shown in FIG. 2 also, each process in the substratetreatment line Lu or Ld aimed at a test run is one executed during atest run, and that aimed at substrate treatment is one executed during anormal operation.

Although other examples of operation in this apparatus are notillustrated, the processes in the substrate treatment lines Lu and Ldmay be changed as desired. Changes in the processes in the substratetreatment line Lu and changes in the processes in the substratetreatment line Ld can be made independently of each other.

For example, the processes in the substrate treatment lines Lu and Ldcan be all or part of the coating and developing process. Part of thecoating and developing process may, for example, be a process forforming resist film on the wafers W (hereinafter called “resist process”as appropriate), or a process for developing the wafers W (hereinaftercalled “developing process” as appropriate). The resist process may, forexample, be a series of treatments from the cooling treatment T1 to theedge exposure T8. The developing process may, for example, be a seriesof treatments from the PEB treatment T10 to the cooling treatment T14.In addition, part of the coating and developing process may, forexample, include the resist film material coating treatment T5 andprocesses relating thereto, the developing T12 and processes relatingthereto, and heat treatment and processes relating thereto. It is alsopossible to select, as desired, processes from the cooling treatment T4to the heating and cooling treatment T6, or a process consisting only ofthe edge exposure T8.

From a different viewpoint, each of the processes in the substratetreatment lines Lu and Ld may be a process consisting of a singletreatment, or a process having a plurality of different type treatments.The process consisting of a single treatment includes any one of thetreatments T1-T8 and T10-T14. The process having a plurality ofdifferent type treatments may, for example, include the coolingtreatment T14, heating and cooling treatment T3, and developingtreatment T12. The number of treatments included in the process having aplurality of different type treatments may be larger or smaller than thenumber of treatments included in the coating and developing process. Theorder of treatments in the process having a plurality of different typetreatments may be the same as or different from the order of treatmentsin the coating and developing process.

Each process in the substrate treatment lines Lu and Ld may be a processduring a normal operation, or a process during a test run. Therefore,processes during a test run may be executed on both substrate treatmentlines Lu and Ld.

This embodiment will now be compared with a comparative example. FIG. 18is a schematic view showing an outline of a substrate treating apparatusin the comparative example. The substrate treating apparatus shown inFIG. 18 has a single substrate treatment line Ls. When the coating anddeveloping process and the process consisting only of resist filmmaterial coating treatment are carried out in parallel in this substratetreatment line Ls, wafers W are transported along a path shown in solidlines in FIG. 18 (coating and developing process), while wafers W aretransported along a path shown in dotted lines (process consisting onlyof resist film material coating treatment). When the wafers W aretransported alternately along the two transport paths in the singlesubstrate treatment line Ls as above, the wafer transporting efficiencyfalls as a whole, and the control for transporting the wafers W becomesvery complicated. On the other hand, as shown in FIGS. 1 and 2, it isclear that this apparatus 10 has a higher wafer transporting efficiency,and that the control for transporting the wafers W is simpler andeasier.

Thus, this apparatus 10 with two substrate treatment lines Lu and Ld canconveniently realize an operation to treat wafers W in parallel throughthe same process in the substrate treatment lines Lu and Ld, and anoperation to treat wafers W in parallel through different processes inthe substrate treatment lines Lu and Ld. In the former case, wafers Wtreated in the same process can be obtained from the substrate treatmentlines Lu and Ld. In the latter case, wafers W treated in differentprocesses can be obtained simultaneously from the substrate treatmentlines Lu and Ld. Further, by selecting the substrate treatment line Luor Ld for transporting wafers W, processes of treatment can be variedfor different wafers W.

This embodiment will be described in greater detail hereinafter. FIG. 3is a plan view showing an outline of the substrate treating apparatusaccording to this embodiment. FIGS. 4 and 5 are schematic side viewsshowing an arrangement of treating units included in the substratetreating apparatus. FIGS. 6 through 9 are views in vertical sectiontaken on lines a-a, b-b, c-c and d-d of FIG. 3, respectively.

This apparatus 10 includes, besides the treating section 3 describedabove, an indexer section (hereinafter called “ID section”) 1, and aninterface section (hereinafter called “IF section”) 5. The ID section 1is located adjacent one side of the treating section 3, and IF section 5is located adjacent the other side of the treating section 3. Theexposing machine EXP, which is an external apparatus separate from thisapparatus 10, is disposed adjacent to the IF section 5.

The ID section 1 receives wafers W transported to the apparatus 10 fromoutside, and transfers the wafers W to the treating section 3. The IFsection 5 transfers the wafers W between the treating section 3 andexposing machine EXP. Each of the ID section 1, treating section 3 andIF section 5 will be described hereinafter.

ID Section 1

The ID section 1 takes wafers W out of each cassette C, which stores aplurality of wafers W, and deposits wafers W in the cassette C. The IDsection 1 has a cassette table 9 for receiving cassettes C. The cassettetable 9 can receive four cassettes C as arranged in a row. The IDsection 1 has also an ID transport mechanism T_(ID). The ID transportmechanism T_(ID) transports wafers W to and from each cassette C, andtransports wafers W to and from receivers PASS₁ and PASS₃ to bedescribed hereinafter. As shown in FIG. 6, the ID transport mechanismT_(ID) has a movable base 21 for moving horizontally alongside thecassette table 9 in the direction of arrangement of the cassettes C, alift shaft 23 vertically extendible and contractible relative to themovable base 21, and a holding arm 25 swivelable on the lift shaft 23,and extendible and retractable radially of the swivel motion, forholding a wafer W.

Treating Section 3

Each substrate treatment line L of the treating section 3 is arranged totransport wafers W substantially horizontally between the ID section 1and IF section 5. Each substrate treatment line L has main transportmechanisms T for transporting the wafers W. In this embodiment, eachsubstrate treatment line L has a plurality of main transport mechanismsT (two for each substrate treatment line L, and thus a total of four).The plurality of main transport mechanisms T of each substrate treatmentline L are arranged in the direction in which the wafers W aretransported, and the wafers W can be transferred between the maintransport mechanisms T adjacent each other in the transport direction.Each main transport mechanism T, while transporting wafers W to varioustreating units described hereinafter, transfers wafers W to the othermain transport mechanism T adjacent thereto.

Specifically, the substrate treatment line Lu includes a main transportmechanism T₁ and a main transport mechanism T₂ arranged in a row. Themain transport mechanism T₁ is disposed adjacent the ID section, whilethe main transport mechanism T₂ is disposed adjacent the IF section 5.Similarly, the substrate treatment line Ld includes a main transportmechanism T₃ and a main transport mechanism T₄ arranged in a row. Themain transport mechanism T₃ is disposed adjacent the ID section, whilethe main transport mechanism T₄ is disposed adjacent the IF section 5.

In this embodiment, the treating section 3 which has the above substratetreatment lines L includes a plurality of (two) treating blocks Ba andBb arranged side by side (in substantially the same direction as thetransport direction). The treating block Ba is located adjacent the IDsection 1, while the treating block Bb is located adjacent the IFsection 5. Each of the treating blocks Ba and Bb is vertically dividedinto a plurality of (two) stories K. The above main transport mechanismT₁ is disposed on the upper story K1 of the treating block Ba, while themain transport mechanism T₃ is disposed on the lower story K3.Similarly, the main transport mechanism T₂ is disposed on the upperstory K2 of the treating block Bb, while the main transport mechanism T₄is disposed on the lower story K4.

The wafers W can be transferred between the main transport mechanisms T₁and T₂ on the same stories K1 and K2 of the adjoining treating blocks Baand Bb. The stories K1 and K2 constitute the substrate treatment lineLu. Similarly, the wafers W can be transferred between the maintransport mechanisms T₃ and T₄, and the stories K3 and K4 constitute thesubstrate treatment line Ld.

Treating Section 3—Treating Block Ba

Receivers PASS₁ and PASS₃ for receiving wafers W are provided betweenthe ID section 1 and the respective stories K1 and K3 of the treatingblock Ba. The receiver PASS₁ receives, as temporarily placed thereon,wafers W passed between the ID transport mechanism T_(ID) and the maintransport mechanism T₁. Similarly, the receiver PASS₃ receives, astemporarily placed thereon, wafers W passed between the ID transportmechanism T_(ID) and the main transport mechanism T₃. Seen in asectional view, the receiver PASS₁ is disposed at a height adjacent alower part of the upper story K2, while the receiver PASS₃ is disposedat a height adjacent an upper part of the lower story K3. Thus, thepositions of receiver PASS₁ and receiver PASS₃ are relatively close toeach other for allowing the ID transport mechanism T_(ID) to movebetween the receiver PASS₁ and receiver PASS₃ through using only a smallamount of vertical movement.

Receivers PASS₂ and PASS₄ for receiving wafers W are provided alsobetween the treating blocks Ba and Bb. The receiver PASS₂ is disposedbetween the story K1 and story K2, and the receiver PASS₄ between thestory K3 and story K4. The main transport mechanisms T₁ and T₂ transferwafers W through the receiver PASS₂, and the main transport mechanismsT₃ and T₄ through the receiver PASS₄.

The receiver PASS₁ includes a plurality of receivers (two in thisembodiment). These receivers PASS₁ are arranged vertically adjacent eachother. Of the two receivers PASS₁, one PASS_(1A) receives wafers Wpassed from the ID transport mechanism T_(ID) to the main transportmechanism T₁. The other receiver PASS_(1B) receives wafers W passed fromthe main transport mechanism T₁ to the ID transport mechanism T_(ID).Each of the receivers PASS₂-PASS₄ and receivers PASS₅ and PASS_(E)described hereinafter similarly includes a plurality of (two) receivers,one of which is selected according to a direction for transferringwafers W. Each of the receivers PASS_(1A) and PASS_(1B) has a sensor(not shown) for detecting presence or absence of a wafer W. Based ondetection signals of each sensor, the transfer of wafers W by the IDtransport mechanism T_(ID) and main transport mechanism T₁ iscontrolled. Similar sensors are attached also to the receiversPASS₂-PASS₆, respectively.

The story K1 will now be described. The main transport mechanism T₁ ismovable in a transporting space A₁ extending substantially through thecenter of the story K1 and parallel to the direction of transport. Thestory K1 has, arranged thereon, coating units 31 for applying a treatingsolution to wafers W, and heat-treating units 41 for heat-treating thewafers W. The coating units 31 are arranged on one side of thetransporting space A₁, while the heat-treating units 41 are arranged onthe other side thereof.

The coating units 31 are arranged vertically and horizontally, eachfacing the transporting space A₁. In this embodiment, four coating units31 in total are arranged in two columns and two rows.

The coating units 31 include anti-reflection film coating units BARC forcoating an anti-reflection film material on the wafers W, and resistfilm coating units RESIST for coating a resist film material on thewafers W. In this specification, the treatment carried out in theanti-reflection film coating units BARC is referred to asanti-reflection film coating treatment as appropriate, and the treatmentcarried out in the resist film coating units RESIST as resist filmcoating treatment.

The plurality of (two) anti-reflection film coating units BARC arearranged at substantially the same height in the lower row. Theplurality of resist film coating units RESIST are arranged atsubstantially the same height in the upper row. No dividing wall orpartition is provided between the antireflection film coating unitsBARC. That is, all the antireflection film coating units BARC are onlyhoused in a common chamber, and the atmosphere around eachantireflection film coating unit BARC is not blocked off (i.e. is incommunication). Similarly, the atmosphere around each resist filmcoating unit RESIST is not blocked off.

Reference is made to FIGS. 10A and 10B. FIG. 10A is a plan view of thecoating units 31. FIG. 10B is a sectional view of a coating unit 31.Each coating unit 31 includes a spin holder 32 for holding and spinninga wafer W, a cup 33 surrounding the wafer W, and a supply device 34 forsupplying a treating solution to the wafer W.

The supply device 34 includes a plurality of nozzles 35, a gripper 36for gripping one of the nozzles 35, and a nozzle moving mechanism 37 formoving the gripper 36 to move one of the nozzles 35 between a treatingposition above the wafer W and a standby position away from above thewafer W. Each nozzle 35 has one end of a treating solution pipe 38connected thereto. The treating solution pipe 38 is arranged movable(flexible) to permit movement of the nozzle 35 between the standbyposition and treating position. The other end of each treating solutionpipe 38 is connected to a treating solution source (not shown).Specifically, in the case of antireflection film coating units BARC, thetreating solution sources supply different types of treating solutionfor antireflection film to the respective nozzles 35. In the case ofresist film coating units RESIST, the treating solution sources supplydifferent types of resist film material to the respective nozzles 35.

The nozzle moving mechanism 37 has first guide rails 37 a and a secondguide rail 37 b. The first guide rails 37 a are arranged parallel toeach other and opposed to each other across the two cups 33 arrangedsideways. The second guide rail 37 b is slidably supported by the twofirst guide rails 37 a and disposed above the two cups 33. The gripper36 is slidably supported by the second guide rail 37 b. The first guiderails 37 a and second guide rail 37 b take guiding action substantiallyhorizontally and in directions substantially perpendicular to eachother. The nozzle moving mechanism 37 further includes drive members(not shown) for sliding the second guide rail 37 b, and sliding thegripper 36. The drive members are operable to move the nozzle 35 grippedby the gripper 36 to the treating positions above the two spin holders32.

The plurality of heat-treating units 41 are arranged vertically andhorizontally, each facing the transporting space A₁. In this embodiment,three heat-treating units 41 can be arranged horizontally, and fiveheat-treating units 41 can be stacked vertically. Each heat-treatingunit 41 has a plate 43 for receiving a wafer W. The heat-treating units41 include cooling units CP for cooling wafers W, heating and coolingunits PHP for carrying out heating and cooling treatments continually,and adhesion units AHL for heat-treating wafers W in an atmosphere ofhexamethyldisilazane (HMDS) vapor in order to promote adhesion ofcoating film to the wafers W. As shown in FIG. 5, each heating andcooling unit PHP has two plates 43, and a local transport mechanism (notshown) for moving a wafer W between the two plates 43. The various typesof heat-treating units CP, PHP and AHL are arranged in appropriatepositions. In this specification, the treatment carried out in theheating and cooling units PHP is referred to as heating and coolingtreatment as appropriate.

The main transport mechanism T₁ will be described specifically.Reference is made to FIG. 11. FIG. 11 is a perspective view of the maintransport mechanism T₁. The main transport mechanism T₁ has two thirdguide rails 51 for providing vertical guidance, and a fourth guide rail52 for providing horizontal guidance. The third guide rails 51 are fixedopposite each other at one side of the transporting space A1. In thisembodiment, the third guide rails 51 are arranged at the side adjacentthe coating units 31. The fourth guide rail 52 is slidably attached tothe third guide rails 51. The fourth guide rail 52 has a base 53slidably attached thereto. The base 53 extends transversely,substantially to the center of the transporting space A1. The maintransport mechanism T₁ further includes drive members (not shown) forvertically moving the fourth guide rail 52, and horizontally moving thebase 53. The drive members are operable to move the base 53 to positionsfor accessing the coating units 31 and heat-treating units 41 arrangedvertically and horizontally.

The base 53 has a turntable 55 rotatable about a vertical axis Q. Theturntable 55 has two holding arms 57 a and 57 b horizontally movablyattached thereto for holding wafers W, respectively. The two holdingarms 57 a and 57 b are arranged vertically close to each other. Further,drive members (not shown) are provided for rotating the turntable 55,and moving the holding arms 57 a and 57 b. The drive members areoperable to move the turntable 55 to positions opposed to the coatingunits 31, heat-treating units 41 and receivers PASS₁ and PASS₂, and toextend and retract the holding arms 57 a and 57 b to and from thecoating units 31 and so on.

The story K3 will be described next. Like reference numerals are used toidentify like parts which are the same as in the story K1, and will notbe described again. The layout (arrangement) in plan view of the maintransport mechanism T₃ and treating units in the story K3 issubstantially the same as in the story K1. Thus, the arrangement of thevarious treating units of the story K3 as seen from the main transportmechanism T₃ is substantially the same as the arrangement of the varioustreating units of the story K1 as seen from the main transport mechanismT₁. The coating units 31 and heat-treating units 41 of the story K3 arestacked under the coating units 31 and heat-treating units 41 of thestory K1, respectively.

In the following description, when distinguishing the resist filmcoating units RESIST in the stories K1 and K3, subscripts “1” and “3”will be affixed (for example, the resist film coating units RESIST inthe story K1 will be referred to as “resist film coating unitsRESIST₁”).

The other aspects of the treating block Ba will be described. As shownin FIGS. 6 and 7, each of the transporting spaces A₁ and A₃ has a firstblowout unit 61 for blowing out a clean gas, and an exhaust unit 62 forsucking the gas. Each of the first blowout unit 61 and exhaust unit 62is in the form of a flat box having substantially the same area as thetransporting space A₁ in plan view. Each of the first blowout unit 61and exhaust unit 62 has first blowout openings 61 a or exhaust openings62 a formed in one surface thereof. In this embodiment, the firstblowout openings 61 a or exhaust openings 62 a are in the form ofnumerous small bores f (see FIG. 11). The first blowout units 61 arearranged over the transporting spaces A₁ and A₃ with the first blowoutopenings 61 a directed downward. The exhaust units 62 are arranged underthe transporting spaces A₁ and A₃ with the exhaust openings 62 adirected upward. The atmosphere in the transporting space A₁ and theatmosphere in the transporting space A₃ are blocked off by the exhaustunit 62 of the transporting space A₁ and the first blowout unit 61 ofthe transporting space A₃. Thus, each of the stories K1 and K3 has theatmosphere blocked off from the other.

Referring to FIG. 7, the first blowout units 61 of the transportingspaces A₁ and A₃ are connected to a common, first gas supply pipe 63.The first gas supply pipe 63 extends laterally of the receivers PASS₂and PASS₄ from an upper position of the transporting space A₁ to a lowerposition of the transporting space A₃, and is bent below thetransporting space A₃ to extend horizontally. The other end of the firstgas supply pipe 63 is connected to a gas source not shown. Similarly,the exhaust units 62 of the transporting spaces A₁ and A₃ are connectedto a common, first gas exhaust pipe 64. The first gas exhaust pipe 64extends laterally of the receivers PASS₂ and PASS₄ from a lower positionof the transporting space A₁ to a lower position of the transportingspace A₃, and is bent below the transporting space A2 to extendhorizontally. As the gas is blown out of each first blowout opening 61 aand sucked and exhausted through each exhaust opening 62 a of thetransporting spaces A1 and A3, gas currents are formed to flow from topto bottom of the transporting spaces A₁ and A₃, thereby keeping each ofthe transporting spaces A₁ and A₃ in a clean state.

As shown in FIGS. 3, 8 and 10A, each coating unit 31 of the stories K1and K3 has a pit portion PS extending vertically. The pit portion PSaccommodates a second gas supply pipe 65 extending vertically forsupplying the clean gas, and a second gas exhaust pipe 66 extendingvertically for exhausting the gas. Each of the second gas supply pipe 65and second gas exhaust pipe 66 branches at a predetermined height ineach coating unit 31 to extend substantially horizontally from the pitportion PS. A plurality of branches of the second gas supply pipe 65 areconnected to second blowout units 67 for blowing out the gas downward. Aplurality of branches of the second gas exhaust pipe 66 are connectedfor communication to the bottoms of the respective cups 33. The otherend of the second gas supply pipe 65 is connected to the first gassupply pipe 63 below the story K3. The other end of the second gasexhaust pipe 66 is connected to the first gas exhaust pipe 64 below thestory K3. As the gas is blown out of the second blowout units 67 andexhausted through the second exhaust pipes 62 a, the atmosphere insideeach cup 33 is constantly maintained clean, thereby allowing forexcellent treatment of the wafer W held by the spin holder 32.

The pit portions PS further accommodate piping of the treatingsolutions, electric wiring and the like (not shown). Thus, with the pitportions PS accommodating the piping and electric wiring provided forthe coating units 31 of the stories K1 and K3, the piping and electricwiring can be reduced in length.

The treating block Ba has one housing 75 for accommodating the maintransport mechanisms T₁ and T₃, coating units 31 and heat-treating units41 described hereinbefore. The treating block Bb described hereinafteralso has a housing 75 for accommodating the main transport mechanisms T₂and T₄ and the treating units of the treating block Bb. The housing 75of the treating block Ba and the housing 75 of the treating block Bb areseparate entities. Thus, with each of the treating blocks Ba and Bbhaving the housing 75 accommodating the main transport mechanisms T andtreating units en bloc, the treating section 3 may be manufactured andassembled simply. The treating block Ba corresponds to the coating blockin this invention.

Treating Section 3—Treating Block Bb

The story K2 will be described. Like reference numerals are used toidentify like parts which are the same as in the story K1 and will notbe described again. The story K2 has a transporting space A₂ formed asan extension of the transporting space A₁.

The story K2 has developing units DEV for developing wafers W,heat-treating units 42 for heat-treating the wafers W, and an edgeexposing unit EEW for exposing peripheral regions of the wafers W. Thedeveloping units DEV are arranged at one side of the transporting spaceA₂, and the heat-treating units 42 and edge exposing unit EEW arearranged at the other side of the transporting space A₂. Preferably, thedeveloping units DEV are arranged at the same side as the coating units31. It is also preferable that the heat-treating units 42 and edgeexposing unit EEW are arranged in the same row as the heat-treatingunits 41. In this specification, the treatment carried out in thedeveloping units DEV is referred to as developing treatment asappropriate, and the treatment carried out in the edge exposing unit EEWis referred to as edge exposure as appropriate.

The number of developing units DEV is four, and sets of two units DEVarranged horizontally along the transporting space A₂ are stacked oneover the other. As shown in FIGS. 3 and 8, each developing unit DEVincludes a spin holder 77 for holding and spinning a wafer W, and a cup79 surrounding the wafer W. The two developing units DEV arranged at thelower level are not separated from each other by a partition wall or thelike. A supply device 81 is provided for supplying developers to the twodeveloping units DEV. The supply device 81 includes two slit nozzles 81a having a slit or a row of small bores for delivering the developers.The slit or row of small bores, preferably, has a length correspondingto the diameter of wafer W. Preferably, the two slit nozzles 81 a arearranged to deliver developers of different types or concentrations. Thesupply device 81 further includes a moving mechanism 81 b for movingeach slit nozzle 81 a. Thus, the slit nozzles 81 a are movable,respectively, over the two spin holders 77 juxtaposed sideways.

The plurality of heat-treating units 42 are arranged sideways along thetransporting space A₂, and stacked one over the other. The heat-treatingunits 42 include heating units HP for heating wafers W, cooling units CPfor cooling wafers W, and heating and cooling units PHP for carrying outheating and cooling treatment.

The plurality of heating and cooling units PHP are vertically stacked inthe column closest to the IF section 5, each having one side facing theIF section 5. The heating and cooling units PHP on the story K2 havetransport ports formed in the sides thereof for passage of wafers W. IFtransport mechanisms T_(IF) to be described hereinafter transportswafers W through the above transport ports to the heating and coolingunits PHP. The heating and cooling units PHP arranged on the story K2carry out post-exposure baking (PEB) treatment. Thus, the heating andcooling treatment carried out in the heating and cooling units PHP onthe story K2 is referred to herein as PEB treatment in particular.Similarly, the heating and cooling treatment carried out in the heatingand cooling units PHP on the story K4 is referred to herein as PEBtreatment in particular.

The single edge exposing unit EEW is disposed in a predeterminedposition. The edge exposing unit EEW includes a spin holder (not shown)for holding and spinning a wafer W, and a light emitter (not shown) forexposing edges of the wafer W held by the spin holder.

The receiver PASS₅ is formed on top of the heating and cooling unitsPHP. The main transport mechanism T₂ and IF transport mechanisms T_(IF)to be described hereinafter transfer wafers W through the receiverPASS₅.

The main transport mechanism T₂ is disposed substantially centrally ofthe transporting space A₂ in plan view. The main transport mechanism T₂has the same construction as the main transport mechanism T₁. The maintransport mechanism T₂ transports wafers W to and from the receiverPASS₂, various heat-treating units 42, edge exposing unit EEW andreceiver PASS₅.

The story K4 will be described briefly. The relationship in constructionbetween story K2 and story K4 is similar to that between stories K1 andK3. The treating units on the story K4 are developing units DEV,heat-treating units 42 and an edge exposing unit EEW. The heat-treatingunits 42 on the story K4 include heating units HP, cooling units CP andheating and cooling units PHP. The receiver PASS₆ is formed on top ofthe heating and cooling units PHP on the story K4. The main transportmechanism T₄ and IF transport mechanisms T_(IF) described hereinaftertransfer wafers W through the receiver PASS₆. The heating and coolingunits PHP arranged on the story K4 also carry out post-exposure baking(PEB) treatment.

In the following description, when distinguishing the developing unitsDEV, edge exposing units EEW and so on provided on the stories K2 andK4, subscripts “2” and “4” will be affixed (for example, the heatingunits HP on the story K2 will be referred to as “heating units HP₂”).

Each of the transporting spaces A₂ and A₄ of the stories K2 and K4 alsohas constructions corresponding to the first blowout unit 61 and exhaustunit 62. Each developing unit DEV of the stories K2 and K4 also hasconstructions corresponding to the second blowout unit 67 and second gasexhaust pipe 66. The treating block Bb corresponds also to thedeveloping block in this invention.

IF Section 5

The IF section 5 transfers wafers W between each of the substratetreatment lines Lu and Ld (stories K2 and K4) of the treating section 3and the exposing machine EXP. The IF section 5 has IF transportmechanisms T_(IF) for transporting wafers W. The IF transport mechanismsT_(IF) include a first transport mechanism T_(IFA) and a secondtransport mechanism T_(IFB) that can transfer wafers W to and from eachother. The first transport mechanism T_(IFA) transports wafers W to andfrom the substrate treatment lines Lu and Ld. In this embodiment, asdescribed hereinbefore, the first transport mechanism T_(IFA) transportswafers W to and from the receivers PASS₅ and PASS₆ on the stories K2 andK4, and to and from the heating and cooling units PHP on the stories K3and K4. The second transport mechanism T_(IFB) transports wafers W toand from the exposing machine EXP.

As shown in FIG. 3, the first transport mechanism T_(IFA) and secondtransport mechanism T_(IFB) are arranged in a transverse directionperpendicular to the transport direction of the substrate treatmentlines L. The first transport mechanism T_(IFA) is disposed at the sidewhere the heat-treating units 42 and so on of the stories K2 and K4 arelocated. The second transport mechanism T_(IFB) is disposed at the sidewhere the developing units DEV of the stories K2 and K4 are located.Stacked in multiples stages between the first and second transportmechanisms T_(IFA) and T_(IFB) are a receiver PASS-CP for receiving andcooling wafers W, a receiver PASS₇ for receiving wafers W, and buffersBF for temporarily storing wafers W. The first and second transportmechanisms T_(IFA) and T_(IFB) transfer wafers W through the receiverPASS-CP and receiver PASS₇. The buffers BF are accessed exclusively bythe first transport mechanism T_(IFA).

As shown in FIG. 9, the first transport mechanism T_(IFA) includes afixed base 83, lift shafts 85 vertically extendible and contractiblerelative to the base 83, and a holding arm 87 swivelable on the liftshafts 85, and extendible and retractable radially of the swivel motion,for holding a wafer W. The second transport mechanism T_(IFB) also has abase 83, lift shafts 85 and a holding arm 87.

A control system of this apparatus 10 will be described next. Thisapparatus 10 further includes a control section 90 and an input unit101. FIG. 12 is a control block diagram of the substrate treatingapparatus according to the invention.

The input unit 101 is operable to input information for settingsubstrate transport paths for each of the substrate treatment lines Luand Ld. The information inputted to this input unit 101 is outputted toa main controller 91. The information for setting substrate transportpaths for each story includes the types and order of treating unitsto/in which substrates are to be transported, for example. Or, it isinformation identifying treating units or particulars of treatment forwhich a test run is made. The information for setting transport pathsfor the substrate treatment line Lu may be divided into each transportpath for the stories K1 and K2. This applies also to the substratetreatment line Ld.

The input unit 101 has pointing devices represented by a mouse,keyboard, joystick, trackball, touch panel, and so on.

As shown in FIG. 12, the control section 90 includes a main controller91 and a first to a seventh controllers 93, 94, 95, 96, 97, 98 and 99.The main controller 91 performs overall control of the first to seventhcontrollers 93-99. Based on a treating recipe set beforehand and/orinformation inputted to the input unit 101, the main controller 91controls the main transport mechanisms T through the first to seventhcontrollers 93-99, to change the transport paths for each story K.

For example, based on information on the types and order of treatingunits to/in which substrates are to be transported, the main controller91 determines treating units and their order to/in which wafers W aretransported, and also determines transport paths linking the treatingunits. Alternatively, based on information identifying treating unitsput to a test run, the main controller 91 determines transport paths fortransporting wafers W only to the treating units identified.

The first controller 93 controls substrate transport by the ID transportmechanism T_(ID). The second controller 94 controls substrate transportby the main transport mechanism T₁, and substrate treatment in theresist film coating units RESIST₁, antireflection film coating unitsBARC₁, cooling units _(CP1), heating and cooling units PHP₁ and adhesionunits AHL₁. The third controller 95 controls substrate transport by themain transport mechanism T₂, and substrate treatment in the edgeexposing unit EEW₂, developing units DEV₂, heating units HP₂ and coolingunits CP₂. The controls by the fourth and fifth controllers 96 and 97correspond to those by the second and third controllers 94 and 95,respectively. The sixth controller 98 controls substrate transport bythe first transport mechanism T_(IFA), and substrate treatment in theheating and cooling units PHP₂ and PHP₄. The seventh controller 99controls substrate transport by the second transport mechanism T_(IFB).The first to seventh controllers 93-99 carry out the controlsindependently of one another.

Each of the main controller 91 and the first to seventh controllers93-99 is realized by a central processing unit (CPU) which performsvarious processes, a RAM (Random Access Memory) used as the workspacefor operation processes, and a storage medium such as a fixed disk forstoring a variety of information including a predetermined processingrecipe (processing program).

Next, operation of the substrate treating apparatus in this embodimentwill be described separately for the case where wafers W go through thesame process of treatment in the substrate treatment lines Lu and Ld,and for the case where wafers W go through different processes oftreatment in the substrate treatment lines Lu and Ld. In each example ofoperation, the transport paths of wafers W are based on informationinputted to the input unit 101 by the operator beforehand.

Example of Operation 1—where Wafers W go Through the Same Process ofTreatment in the Substrate Treatment Lines Lu and Ld

FIG. 13 is a flow chart of a series of treatments of wafers W,indicating transport paths of wafers W, that is the treating units andreceivers to which the wafers W are transported in order. The flow chartshown in FIG. 13 corresponds to the processes shown in FIG. 1. Forexpediency, the various processes shown in FIG. 1 are put in parenthesesin FIG. 13, to specify the correspondence relations between the variousprocesses shown in FIG. 1 and the treating units shown in FIG. 13. FIG.14 is a view schematically showing operations repeated by each transportmechanism, and specifying an order of treating units, receivers andcassettes accessed by the transport mechanisms.

The control section 90 operates each transport mechanism T based on atreating recipe set beforehand and/or information inputted to the inputunit 101. The following description will be made separately for eachtransport mechanism.

ID Transport Mechanism T_(ID)

The ID transport mechanism T_(ID) moves to a position opposed to one ofthe cassettes C, holds with the holding arm 25 a wafer W to be treatedand takes the wafer W out of the cassette C. The ID transport mechanismT_(ID) swivels the holding arm 25, vertically moves the lift shaft 23,moves to a position opposed to the receiver PASS₁, and places the waferW on the receiver PASS_(1A) (which corresponds to step S1 a in FIG. 13;only step references will be indicated hereinafter). At this time, awafer W usually is present on the receiver PASS_(1B), and the IDtransport mechanism T_(ID) receives this wafer W and stores it in acassette C (step S23). When there is no wafer W on the receiverPASS_(1B), step S23 is omitted. Then, the ID transport mechanism T_(ID)accesses the cassette C, and transports a wafer W from the cassette C tothe receiver PASS_(3A) (step S1 b). Here again, if a wafer W is presenton the receiver PASS_(3B), the ID transport mechanism T_(ID) will storethis wafer W in a cassette C (step S23). The ID transport mechanismT_(ID) repeats the above operation.

This operation of the ID transport mechanism T_(ID) is controlled by thefirst controller 93. As a result, the wafers W in the cassette C are fedto the story K1, and the wafers W delivered from the story K1 are storedin the cassette C. Similarly, the wafers W in the cassette C are fed tothe story K3, and the wafers W delivered from the story K3 are stored inthe cassette C.

Main Transport Mechanisms T₁, T₃

Since operation of the main transport mechanism T₃ is substantially thesame as operation of the main transport mechanism T₁, only the maintransport mechanism T₁ will be described. The main transport mechanismT₁ moves to a position opposed to the receiver PASS₁. At this time, themain transport mechanism T₁ holds, on one holding arm 57 (e.g. 57 b), awafer W received immediately before from the receiver PASS_(2B). Themain transport mechanism T₁ places this wafer W on the receiverPASS_(1B) (step S22), and holds the wafer W present on the receiverPASS_(1A) with the other holding arm 57 (e.g. 57 a).

The main transport mechanism T₁ accesses one of the cooling units CP₁.There is a different wafer W having already received cooling treatmentin the cooling unit CP₁. The main transport mechanism T₁ holds thedifferent wafer W with the unloaded holding arm 57 (holding no wafer W),takes it out of the cooling unit CP₁, and loads into the cooling unitCP₁ the wafer W having received from the receiver PASS_(1A). Then, themain transport mechanism T₁, holding the cooled wafer W, moves to one ofthe antireflection film coating units BARC₁. The cooling unit CP₁ startscooling treatment of the wafer W loaded therein (step S2: the treatmentin step S2 by the cooling unit CP₁ corresponds to cooling treatment T1 uin FIG. 1—only treatment shown in FIG. 1 will be indicated hereinafteras appropriate). This heat treatment (cooling) will have been finishedby the time the main transport mechanism T₁ accesses this cooling unitCP₁ next time. The following description assumes that wafers W havingreceived predetermined treatments are present also in the other,different heat-treating units 41 and coating units 31 when the maintransport mechanism T₁ makes access thereto.

Accessing the antireflection film coating unit BARC₁, the main transportmechanism T₁ takes a wafer W having antireflection film formed thereonfrom the antireflection film coating unit BARC₁, and places the cooledwafer W on the spin holder 32 of the antireflection film coating unitBARC₁. Then, the main transport mechanism T₁, holding the wafer W havingantireflection film formed thereon, moves to one of the heating andcooling units PHP₁. The antireflection film coating unit BARC₁ startsantireflection film material coating treatment of the wafer W placed onthe spin holder 32 (step S3 a—antireflection film material coatingtreatment T2 u).

Specifically, the spin holder 32 spins the wafer W in horizontalposture, the gripper 26 grips one of the nozzles 35, the nozzle movingmechanism 37 moves the gripped nozzle 35 to a position above the waferW, and the treating solution for antireflection film is supplied fromthe nozzle 35 to the wafer W. The treating solution supplied spreads allover the wafer W, and is scattered away from the wafer W. The cup 33collects the scattering treating solution. In this way, the treatment iscarried out for forming antireflection film on the wafer W.

Accessing the heating and cooling unit PHP₁, the main transportmechanism T₁ takes a wafer W having received heat treatment out of theheating and cooling unit PHP₁, and loads the wafer W havingantireflection film formed thereon into the heating and cooling unitPHP₁. Then, the main transport mechanism T₁, holding the wafer W takenout of the heating and cooling unit PHP₁, moves to one of the coolingunits CP₁. The heating and cooling unit PHP₁ receives a wafer Wsuccessively on the two plates 43, to heat the wafer W on one of theplates 43 and then to cool the wafer W on the other plate 43 (step S4a—heating and cooling treatment T3 u).

Having moved to the cooling unit CP₁, the main transport mechanism T₁takes a wafer W out of the cooling unit CP₁, and loads the wafer W heldby the transport mechanism T₁ into the cooling unit CP₁. The coolingunit CP₁ cools the wafer W loaded therein (step S5 a—cooling treatmentT4 u).

Then, the main transport mechanism T₁ moves to one of the resist filmcoating units RESIST₁. The main transport mechanism T₁ takes a wafer Whaving resist film formed thereon from the resist film coating unitRESIST₁, and loads the wafer W held by the main transport mechanism T₁into the resist film coating unit RESIST₁. The resist film coating unitRESIST₁ coats the resist film material on the wafer W loaded thereinwhile spinning the wafer W (step S6 a—resist film material coatingtreatment T5 u).

The main transport mechanism T₁ further moves to one of the heating andcooling units PHP₁ and one of the cooling units CP₁. The main transportmechanism T₁ loads the wafer W having resist film formed thereon intothe heating and cooling unit PHP₁, transfers a wafer W treated in theheating and cooling unit PHP₁ to the cooling unit CP₁, and receives awafer W treated in the cooling unit CP₁. The heating and cooling unitPHP₁ and cooling unit CP₁ carry out predetermined treatments of newlyloaded wafers W, respectively (step S7 a—heating and cooling treatmentT6 u, and S8 a—cooling treatment T7 u).

The main transport mechanism T₁ moves to the receiver PASS₂, places thewafer W it is holding on the receiver PASS_(2A) (step S9 a), andreceives a wafer W present on the receiver PASS_(2B) (step S21 a).

Subsequently, the main transport mechanism T₁ accesses the receiverPASS₁ again, and repeats the above operation. This operation iscontrolled by the second controller 94. As a result, all the wafers Wtransported from the cassette C to the receiver PASS₁ are transportedthrough the transport paths described above between the various treatingunits on the story K1 to receive the predetermined treatments in thetreating units successively.

The main transport mechanism T₁ transports a wafer W having beentransported to the receiver PASS₁ to a predetermined treating unit (acooling unit CP₁ in this embodiment), and takes a treated wafer W fromthis treating unit. Subsequently, the main transport mechanism T₁transports the wafer W taken out to a next treating unit (anantireflection film coating unit BARC₁ in this embodiment), and takes atreated wafer W from this treating unit. In this way, the treatment iscarried out in parallel for a plurality of wafers W by transferring atreated wafer W from each treating unit to a new treating unit. Startingwith a wafer W first placed on the receiver PASS₁, the wafers W aresuccessively placed on the receiver PASS₂ to be fed to the story K2.Similarly, the wafers W are placed on the receiver PASS₁ in the order ofplacement on the receiver PASS₂, to be fed to the ID section 1.

Main Transport Mechanisms T₂, T₄

Since operation of the main transport mechanism T₄ is substantially thesame as operation of the main transport mechanism T₂, only the maintransport mechanism T₂ will be described. The main transport mechanismT₂ moves to a position opposed to the receiver PASS₂. At this time, themain transport mechanism T₂ holds a wafer W received from a cooling unitCP₂ accessed immediately before. The main transport mechanism T₂ placesthis wafer W on the receiver PASS_(2B) (step S21 a), and holds the waferW present on the receiver PASS_(2A) (step S9 a).

The main transport mechanism T₂ accesses the edge exposing unit EEW₂.The main transport mechanism T₂ receives a wafer W having received apredetermined treatment in the edge exposing unit EEW₂, and loads thecooled wafer W into the edge exposing unit EEW₂. While spinning thewafer W loaded therein, the edge exposing unit EEW₂ irradiatesperipheral regions of the wafer W with light from the light emitter notshown, thereby exposing the peripheral regions of the wafer W (step S10a—edge exposure T8 u).

The main transport mechanism T₂, holding the wafer W received from theedge exposing unit EEW₂, accesses the receiver PASS₅. The main transportmechanism T₂ places the wafer W on the receiver PASS_(5A) (step S11 a),and holds a wafer W present on the receiver PASS_(5B) (step S16 a).

The main transport mechanism T₂ moves to one of the cooling units CP₂,and replaces a wafer W in the cooling unit CP₂ with the wafer W held bythe main transport mechanism T₂. The main transport mechanism T₂ holdsthe wafer W having received cooling treatment, and accesses one of thedeveloping units DEV₂. The cooling unit CP₂ starts treatment of thenewly loaded wafer W (step S17 a—cooling treatment T1 u).

The main transport mechanism T₂ takes a developed wafer W from thedeveloping unit DEV₂, and places the cooled wafer W on the spin holder77 of the developing unit DEV₂. The developing unit DEV₂ develops thewafer W placed on the spin holder 77 (step S18 a—developing treatmentT12 u). Specifically, while the spin holder 77 spins the wafer W inhorizontal posture, the developer is supplied from one of the slitnozzles 81 a to the wafer W, thereby developing the wafer W.

The main transport mechanism T₂ holds the developed wafer W, andaccesses one of the heating units HP₂. The main transport mechanism T₂takes a wafer W out of the heating unit HP₂, and loads the wafer W it isholding into the heating unit HP₂. Then, the main transport mechanism T₂transports the wafer W taken out of the heating unit HP₂ to one of thecooling units CP₂, and takes out a wafer W already treated in thiscooling unit CP₂. The heating unit HP₂ and cooling unit CP₂ carry outpredetermined treatments for the newly loaded wafers W, respectively(step S19 a—heating treatment T13 u, and S20 a—cooling treatment T14 u).

Subsequently, the main transport mechanism T₂ accesses the receiverPASS₂ again, and repeats the above operation. This operation iscontrolled by the third controller 95. As a result, the wafers W areforwarded to the receiver PASS_(5B) in the order in which they areplaced on the receiver PASS_(2A). Similarly, the wafers W are forwardedto the receiver PASS_(5B) in the order in which they are placed on thereceiver PASS_(5B).

IF Transport Mechanisms T_(IF)—First Transport Mechanism T_(IFA)

The first transport mechanism T_(IFA) accesses the receiver PASS₅, andreceives the wafer W present on the receiver PASS_(5A) (step S11 a). Thefirst transport mechanism T_(IFA), holding the wafer W received, movesto the receiver PASS-CP, and loads the wafer W on the receiver PASS-CP(step S12).

Next, the first transport mechanism T_(IFA) receives a wafer W from thereceiver PASS₇ (step S14), and moves to a position opposed to one of theheating and cooling units PHP₂. The first transport mechanism T_(IFA)takes a wafer W having received PEB treatment from the heating andcooling unit PHP₂, and loads the wafer W received from the receiverPASS₇ into the heating and cooling unit PHP₂. The heating and coolingunit PHP₂ carries out heat treatment for the newly loaded wafer W (stepS15 a—PEB treatment T10 u).

The first transport mechanism T_(IFA) transports the wafer W taken outof the heating and cooling unit PHP₂ to the receiver PASS_(5B) (step S16a). Subsequently, the first transport mechanism T_(IFA) transports awafer W from the receiver PASS_(6A) to the receiver PASS-CP (Step S11 b,S12). Next, the first transport mechanism T_(IFA) transports a wafer Wfrom the receiver PASS₇ to one of the heating and cooling units PHP₄. Atthis time, the first transport mechanism T_(IFA) takes out a wafer Whaving received the post-exposure baking treatment (PEB) treatment inthe heating and cooling unit PHP₄, and places the wafer W on thereceiver PASS_(6B) (steps S14, S15 b—PEB treatment T10 d, and S16 b).

Subsequently, the first transport mechanism T_(IFA) accesses thereceiver PASS₅ again and repeats the above operation. This operation iscontrolled by the sixth controller 98.

IF Transport Mechanisms T_(IF)—Second Transport Mechanism T_(IFB)

The second transport mechanism T_(IFB) takes a wafer W out of thereceiver PASS-CP, and transports it to the exposing machine EXP. Theexposing machine EXP exposes the wafer W (Step S13—Exposure T9). Then,the second transport mechanism T_(IFB) receives the exposed wafer W fromthe exposing machine EXP, and transports it to the receiver PASS₇.

Subsequently, the second transport mechanism T_(IFB) accesses thereceiver PASS-CP again and repeats the above operation.

Example of Operation 2—where Wafers W go Through Different Processes ofTreatment in the Substrate Treatment Lines Lu and Ld

The example of operation 2 will be described next. FIG. 15 is a flowchart of a series of treatments of wafers W, indicating transport pathsof wafers W, that is, the treating units and receivers to which thewafers W are transported in order. The flow chart shown in FIG. 15corresponds to the processes shown in FIG. 2. For expediency, thevarious processes shown in FIG. 2 are put in parentheses in FIG. 15, tospecify the correspondence relations between the various processes shownin FIG. 2 and the treating units shown in FIG. 15. FIG. 16 is a viewschematically showing operations repeated by each transport mechanism,and specifying an order of treating units, receivers and cassettesaccessed by the transport mechanisms.

The control section 90 operates each transport mechanism T based on atreating recipe set beforehand and/or information inputted to the inputunit 101. The following description will be made separately for eachtransport mechanism. The transport mechanisms and other components thatperform similarly to the example of operation 1 will be describedbriefly as appropriate.

ID Transport Mechanism T_(ID)

The operation of ID transport mechanism T_(ID) is the same as in theexample of operation 1, and therefore its description is omitted.

Main Transport Mechanisms T₁, T₃

The operation of the main transport mechanism T₁ is the same as in theexample of operation 1. Thus, the operation of the main transportmechanism T₁ will be omitted, and only the main transport mechanism T₃will be described.

The main transport mechanism T₃ moves to a position opposed to thereceiver PASS₃. At this time, the main transport mechanism T₃ holds, onone holding arm 57 (e.g. 57 b), a wafer W received immediately beforefrom the receiver PASS_(4B). The main transport mechanism T₃ places thiswafer W on the receiver PASS_(3B) (step S22 b), and holds the wafer Wpresent on the receiver PASS_(3A) with the other holding arm 57 (e.g. 57a) (step S1 b).

The main transport mechanism T₃ accesses one of the resist film coatingunits RESIST₃. The main transport mechanism T₃ takes a wafer W havingresist film formed thereon from the resist film coating unit RESIST₃,and loads the wafer W held by the main transport mechanism T₃ into theresist film coating unit RESIST₃. The resist film coating unit RESIST₃coats the resist film material on the wafer W loaded therein whilespinning the wafer W (step S6 b—resist film material coating treatmentT21 d).

Subsequently, the main transport mechanism T₃ accesses the receiverPASS₃ again, and repeats the above operation. This operation iscontrolled by the fourth controller 96. As a result, all the wafers Wtransported from the cassette C to the receiver PASS₃ are transportedthrough the transport path leading only to the resist film coating unitRESIST₃ on the story K3.

Main Transport Mechanisms T₂, T₄

The operation of the main transport mechanism T₂ is the same as in theexample of operation 1. Thus, the operation of the main transportmechanism T₂ will be omitted. The main transport mechanism T₄ carriesout no operation to transport wafers W. For example, the fifthcontroller 97 maintains the main transport mechanism T₄ at rest.

IF Transport Mechanisms T_(IF)—First Transport Mechanism T_(IFA)

The first transport mechanism T_(IFA) accesses the receiver PASS₅, andreceives the wafer W present on the receiver PASS_(5A) (step S11 a). Thefirst transport mechanism T_(IFA), holding the wafer W received, movesto the receiver PASS-CP, and loads the wafer W on the receiver PASS-CP(step S12).

Next, the first transport mechanism T_(IFA) receives a wafer W from thereceiver PASS₇ (step S14), and moves to a position opposed to one of theheating and cooling units PHP₂. The first transport mechanism T_(IFA)takes a wafer W having received post-exposure baking treatment (PEB)treatment from the heating and cooling unit PHP₂, and loads the wafer Wreceived from the receiver PASS₇ into the heating and cooling unit PHP₂.The heating and cooling unit PHP₂ carries out heat treatment for thenewly loaded wafer W (step S15—PEB treatment T10 u). The first transportmechanism T_(IFA) transports the wafer W taken out of the heating andcooling unit PHP₂ to the receiver PASS_(5B) (step S16 a).

Subsequently, the first transport mechanism T_(IFA) accesses thereceiver PASS₅ again and repeats the above operation.

IF Transport Mechanisms T_(IF)—Second Transport Mechanism T_(IFB)

The operation of the second transport mechanism T_(IFB) is the same asin the example of operation 1. Thus, the operation of the secondtransport mechanism T_(IFB) will be omitted.

The above is the example of operation 2. However, the processes in thesubstrate treatment lines Lu and Ld are not limited to examples ofoperation 1 and 2. As noted in the foregoing description of the outlineof this embodiment, the processes in the substrate treatment lines Luand Ld can be changed very flexibly. Thus, since the substrate treatingapparatus in this embodiment has the control section 90 which changesthe processes in the substrate treatment lines Lu and Ld, the substratetreatment lines Lu and Ld can carry out different treatments of wafers Win parallel as described in the example of operation 2. Therefore, bytransporting wafers W selectively to the substrate treatment line Lu orLd, the process of treatment is changeable for each wafer W. Further, asdescribed in the example of operation 1, wafers W can go through thesame process of treatment in the substrate treatment lines Lu and Ld.Consequently, this apparatus 10 has an improved substrate throughput.

Specifically, in the example of operation 1, wafers W go through thecoating and developing process in all the substrate treatment lines L.This embodiment includes heat treatment besides the resist film materialcoating treatment and developing treatment. Thus, resist film can beformed on the wafers W conveniently, and the wafers W can be developedconveniently.

In the example of operation 2, while wafers W go through the coating anddeveloping process in the substrate treatment line Lu, a processconsisting only of the resist film material coating treatment is carriedout in the substrate treatment line Ld. The resist film material coatingtreatment is a single treatment, which is carried out in the resist filmcoating units RESIST. Thus, when inspecting and verifying the quality ofthe resist film material coating treatment, or putting the resist filmcoating units RESIST to a test run, operation may be carried out asdescribed in the example of operation 2 to inhibit a sharp reduction inthe working rate of this apparatus.

The treating section 3 has the treating blocks Ba and Bb arranged injuxtaposition, the substrate treatment line Lu is provided on the samestories K1-K2 of the treating blocks Ba and Bb, and the substratetreatment line Ld also is provided on the same stories K3-K4 of thetreating blocks Ba and Bb. The control section 90 controls the maintransport mechanisms T₁-T₄ on the respective stories K1-K4 to change thetransport paths of wafers W on the stories K1-K4. Thus, the processes inthe substrate treatment lines Lu and Ld can be changed separately andindependently. In other words, it is possible to change each of theseries of treatments on the same stories K1-K2 of the treating blocks Baand Bb and the series of treatments on the same stories K3-K4.

The input unit 101 is provided, and the control section 90 carries outcontrols based on information inputted to the input unit 101. Thus, theoperator who operates the input unit 101 can instruct changes in thetransport paths conveniently.

The information inputted to the input unit 101 is information on thetype and order of treatment given to wafers W in each of the substratetreatment lines Lu and Ld, or information identifying treating unitsand/or the particulars of treatment put to a test run. Thus, the controlsection 90 can determine transport paths conveniently.

The treating block Bb and ID section 1 are located adjacent the oppositesides of the treating block Ba, and wafers W treated in the coatingunits 31 are transported from the treating block Ba to the treatingblock Bb. Thus, a series of treatments including the treatment forapplying the treating solution to the wafers W and the treatment forsupplying the developer to the wafers W can be carried out smoothly.Further, by transporting wafers W treated in the coating units 31 fromthe treating blocks Ba to the ID section 1, only the treatment forapplying the treating solution to the wafers W is carried out, and thewafers W can be returned to a cassette C promptly.

Since the IF section 5 is located adjacent the treating block Bb, wafersW can be transported from the treating block Bb to the exposing machineEXP through the IF section 5, and the wafers W exposed in the exposingmachine EXP can be developed in the developing units DEV. Further,unexposed wafers W may be developed in the developing units DEV of thetreating block Bb, without transporting the wafers W from the treatingblock Bb to the exposing machine EXP.

Embodiments of the present invention are not limited to the foregoingembodiments, but may be modified as follows:

(1) Although the examples of operation 1 and 2 have been described inthe foregoing embodiment, the invention is not limited to theseexamples.

Reference is made to FIG. 17. This is a schematic view showing anoutline of a modified substrate treating apparatus. In the illustratedmodification, the substrate treatment lines Lu and Ld carry outdifferent processes of treatment for wafers W. The substrate treatmentline Lu carries out the coating and developing process. The substratetreatment line Ld carries out a plurality of different types oftreatment, which are the same as the coating and developing processexcepting that the first three treatments (cooling treatment T1 u,antireflection film material coating treatment T2 u and heating andcooling treatment T3 u) are not carried out. The first three treatmentsin the coating and developing process are antireflection film materialcoating treatment T2, and heat treatments T1 and T3 relating thereto,which can be said the process for forming antireflection film on wafersW.

In this modification, the ID section 1 (ID transport mechanism T_(ID))transports wafers W taken out of a cassette C to either one of thesubstrate treatment line Lu and Ld, and returns the wafers W from thesubstrate treatment line Lu and Ld to the cassette C. With suchsubstrate transport by the ID section 1 (ID transport mechanism T_(ID)),wafers W can be treated through the process in either one of thesubstrate treatment lines Lu and Ld.

Further, in this modification, the ID section 1 (ID transport mechanismT_(ID)) transports all the wafers W taken out of a cassette C to thesubstrate treatment line Lu, transports the wafers W from the substratetreatment line Lu to the substrate treatment line Ld, and returns thewafers W from the substrate treatment line Ld to the cassette C. Withsuch substrate transport by the ID section 1 (ID transport mechanismT_(ID)), all the wafers W can be treated through the process in thesubstrate treatment line Lu, and thereafter through the process in thesubstrate treatment line Ld. Such an example of operation canconveniently carry out double exposure for forming two or more patternson the same oxide film on the wafers W.

(2) In the foregoing embodiment, as shown in FIGS. 1 and 2, the coatingand developing process includes various treatments T1-T8 and T10-T14carried out in this order. The invention is not limited to the above,but change may be made as appropriate.

(3) In the foregoing embodiment, the separate exposing machine EXP isdisposed adjacent this apparatus 10, but this is not limitative. Thisapparatus 10 may not adjoin the exposing machine EXP.

(4) The foregoing embodiment provides two substrate treatment lines L,but the invention not limited to this. The construction may be modifiedto include three or more substrate treatment lines L vertically arrangedin multiple stages. In this case, it is possible to uniform theprocesses in the substrate treatment lines L, and to provide two or moretypes of processes for the substrate treatment lines L. All thesubstrate treatment lines L may carry out different processes.

(5) In the foregoing embodiment, the substrate treatment lines L arearranged vertically, but the invention is not limited to this. Forexample, a modification may be made to arrange a plurality of substratetreatment lines L sideways or horizontally. Or a plurality of substratetreatment lines L may be arranged sideways as well as vertically.

(6) In the foregoing embodiment, the treating section 3 has a pluralityof treating blocks Ba and Bb arranged in juxtaposition, but theinvention is not limited to this. For example, the treating section 3may be constructed of a single treating block with vertically dividedstories. A single treating block providing the substrate treatment lineLu and a single treating block providing the substrate treatment line Ldmay be arranged one over the other.

(7) In the foregoing embodiment, the substrate treatment lines L carryout all or part of the coating and developing process, but the inventionis not limited to this. The substrate treatment lines L may be modifiedto perform other treatment such as cleaning of wafers W. Thus, the type,number and the like of treating units are selected or designed asappropriate. Further, the substrate treating apparatus may beconstructed to exclude the IF section 5.

This invention may be embodied in other specific forms without departingfrom the spirit or essential attributes thereof and, accordingly,reference should be made to the appended claims, rather than to theforegoing specification, as indicating the scope of the invention.

What is claimed is:
 1. A substrate treating apparatus comprising: atreating block; the treating block including: a plurality of stories forperforming coating treatment of substrates; and a plurality of storiesfor performing developing treatment of the substrates; each of thestories for performing coating treatment of the substrates having:coating units for performing coating treatment of the substrates;heat-treating units for performing heat treatment of the substrates; anda first main transport mechanism disposed in a transporting space fortransporting the substrates to the coating units and the heat-treatingunits; and each of the stories for performing developing treatment ofthe substrates having: developing units for performing developingtreatment of the substrates; heat-treating units for performing heattreatment of the substrates; and a second main transport mechanismdisposed in a transporting space for transporting the substrates to thedeveloping units and the heat-treating units.
 2. The apparatus accordingto claim 1, wherein the treating block is rectangular in plan view. 3.The apparatus according to claim 1, wherein: the first main transportmechanism, the coating units and the heat-treating units are in samelayout in plan view for the respective stories for performing coatingtreatment; the coating units are in same layout in side view for therespective stories for performing coating treatment; the heat-treatingunits are in same layout in side view for the respective stories forperforming coating treatment; the second main transport mechanism, thedeveloping units and the heat-treating units are in same layout in planview for the respective stories for performing developing treatment; thedeveloping units are in same layout in side view for the respectivestories for performing developing treatment; and the heat-treating unitsare in same layout in side view for the respective stories forperforming developing treatment.
 4. The apparatus according to claim 1,wherein: processes for treating the substrates are the same for therespective stories for performing coating treatment; and processes fortreating the substrates are the same for the respective stories forperforming developing treatment.
 5. The apparatus according to claim 1,further comprising: a first gas supply pipe for supplying a clean gasinto the transporting space of each of the stories for performingcoating treatment of the substrates; and a second gas supply pipe forsupplying the clean gas into the coating units; wherein the second gassupply pipe has an end thereof connected to the first gas supply pipe.6. The apparatus according to claim 5, wherein the end of the second gassupply pipe is connected to the first gas supply pipe in a positionlower than any one of the stories for performing coating treatment ofthe substrates.
 7. The apparatus according to claim 1, furthercomprising: a first gas exhaust pipe for exhausting gas from thetransporting space of each of the stories for performing coatingtreatment of the substrates; and a second gas exhaust pipe forexhausting gas from the coating units; wherein the second gas exhaustpipe has an end thereof connected to the first gas exhaust pipe.
 8. Theapparatus according to claim 1, further comprising: a gas supply pipefor supplying a clean gas into the coating units; and a pit portionformed laterally of the coating units and extending vertically; whereinthe pit portion accommodates the gas supply pipe extending vertically,and at least one of treating solution piping or electric wiring.
 9. Theapparatus according to claim 1, further comprising: a gas exhaust pipefor exhausting gas from the coating units; and a pit portion formedlaterally of the coating units and extending vertically; wherein the pitportion accommodates the gas exhaust pipe extending vertically, and atleast one of treating solution piping or electric wiring.
 10. Theapparatus according to claim 1, wherein the first main transportmechanism provided on each of the stories for performing coatingtreatment of the substrates includes: third guide rails; a fourth guiderail; a base; a turntable; and two holding arms; wherein the third guiderails are arranged to guide the fourth guide rail vertically; whereinthe fourth guide rail is arranged to guide the base horizontally;wherein the turntable is mounted on the base to be rotatable about avertical axis; wherein the two holding arms are each mounted on theturntable to be horizontally movable for holding the substrates; andwherein the third guide rails are arranged adjacent to the coatingunits.
 11. The apparatus according to claim 1, further comprising anexhaust unit disposed at a bottom of the transporting space of each ofthe stories for performing coating treatment of the substrates, forexhausting gas from the transporting space of each of the stories forperforming coating treatment of the substrates.
 12. The apparatusaccording to claim 1, wherein: the coating units are arranged on oneside of the transporting space of each of the stories for performingcoating treatment of the substrates; and the heat-treating units of eachof the stories for performing coating treatment of the substrates arearranged on the other side of the transporting space of each of thestories for performing coating treatment of the substrates.
 13. Theapparatus according to claim 1, further comprising: a first gas supplypipe for supplying a clean gas into the transporting space of each ofthe stories for performing developing treatment of the substrates; and asecond gas supply pipe for supplying the clean gas into the developingunits; wherein the second gas supply pipe has an end thereof connectedto the first gas supply pipe.
 14. The apparatus according to claim 13,wherein the end of the second gas supply pipe is connected to the firstgas supply pipe in a position lower than any one of the stories forperforming developing treatment of the substrates.
 15. The apparatusaccording to claim 1, further comprising: a first gas exhaust pipe forexhausting gas from the transporting space of each of the stories forperforming developing treatment of the substrates; and a second gasexhaust pipe for exhausting gas from the developing units; wherein thesecond gas exhaust pipe has an end thereof connected to the first gasexhaust pipe.
 16. The apparatus according to claim 1, furthercomprising: a gas supply pipe for supplying a clean gas into thedeveloping units; and a pit portion formed laterally of the developingunits and extending vertically; wherein the pit portion accommodates thegas supply pipe extending vertically, and at least one of treatingsolution piping or electric wiring.
 17. The apparatus according to claim1, further comprising: a gas exhaust pipe for exhausting gas from thedeveloping units; and a pit portion formed laterally of the developingunits and extending vertically; wherein the pit portion accommodates thegas exhaust pipe extending vertically, and at least one of treatingsolution piping or electric wiring.
 18. The apparatus according to claim1, wherein the second main transport mechanism provided on each of thestories for performing developing treatment of the substrates includes:third guide rails; a fourth guide rail; a base; a turntable; and twoholding arms; wherein the third guide rails are arranged to guide thefourth guide rail vertically; wherein the fourth guide rail is arrangedto guide the base horizontally; wherein the turntable is mounted on thebase to be rotatable about a vertical axis; wherein the two holding armsare each mounted on the turntable to be horizontally movable for holdingthe substrates; and wherein the third guide rails are arranged adjacentto the developing units.
 19. The substrate treating apparatus accordingto claim 1, further comprising an exhaust unit disposed at a bottom ofthe transporting space of each of the stories for performing developingtreatment of the substrates, for exhausting gas from the transportingspace of each of the stories for performing developing treatment of thesubstrates.
 20. The apparatus according to claim 1, wherein: thedeveloping units are arranged on one side of the transporting space ofeach of the stories for performing developing treatment of thesubstrates; and the heat-treating units of each of the stories forperforming developing treatment of the substrates are arranged on theother side of the transporting space of each of the stories forperforming developing treatment of the substrates.